- 您现在的位置：买卖IC网 > Sheet目录142 > RB520S-40TE61 (Rohm Semiconductor)DIODE SCHOTTKY 40V 200MA SOD523
          Data Sheet www.rohm.com ? 2011 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB520S-40 ?Applications ?Dimensions (Unit : mm) ?Land size figure (Unit : mm) Rectifying small power ?Features 1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability ?Construction Silicon epitaxial ?Structure ?Taping specifications (Unit : mm) ?Absolute maximum ratings (Ta=25°C) Parameter LimitsSymbol Unit Reverse voltage (repetitive peak) 40VRM V Reverse voltage (DC) 40VR V Average rectified forward current 200Io mA Forward current surge peak 1IFSM A Junction temperature 125Tj °C Storage temperatureTstg -40 to +125°C ?Electrical characteristics (Ta=25°C) ParameterSymbol Min. Typ. Max. Unit Conditions Forward voltageVF - - 0.39 V IF=10mA VF - - 0.55 V IF=100mA Reverse currentIR --1μAVR=10V IR --10μAVR=40V EMD2 0.8 1.7 0.6 ROHM : EMD2 JEITA : SC-79 JEDEC :SOD-523 dot (year week factory) 0.12±0.05 0.6±0.1 0.3±0.05 0.8±0.05 1.2±0.05 1.6±0.1 0.900.95±0.06±0.05 0 4.0±0.1 4.0±0.1 2.0±0.05 φ1.5±0.05φ1.55±0.05 3.5±0.05 1.75±0.1 8.0±0.15 0.2±0.05 0.750.76±0.05±0.05 1.26±0.05 0 φ0.5 0.6 2.0±0.05 1.3±0.06 0 2.45±0.1 Empty pocket空ポケット 0.2 2.40 ± 0.05 1.25 ? 0.06 ? 0 1.25 ? 0.06 ? 0 1/3 2011.03 - Rev.E |